symbol v ds v gs i dm t j , t stg symbol typ max 65 90 85 125 r q jl 63 80 maximum junction-to-lead c steady-state c/w thermal characteristics parameter units maximum junction-to-ambient a t 10s r q ja c/w c/w maximum junction-to-ambient a steady-state continuous drain current a,f maximum units parameter 30 gate-source voltage drain-source voltage absolute maximum ratings t a =25c unless otherwise noted vv 20 5.8 4.9 w junction and storage temperature range a p d c 1.4 0.9 -55 to 150 t a =70c i d t a =25c t a =70c power dissipation t a =25c pulsed drain current b 64 features v ds (v) = 30v i d = 5.8a (v gs = 10v) r ds(on) < 25m w (v gs = 10v) r ds(on) < 35m w (v gs = 4.5v) AO3404A n-channel enhancement mode field effect transistor general description the AO3404A uses advanced trench technology to provide excellent r ds(on) and low gate charge. this device is suitable for use as a load switch or in pwm applications. the source leads are separated to allow a kelvin connection to the source, which may be used to bypass the source inductance. g d s sot23 top view bottom view d g s g s d alpha & omega semiconductor, ltd. www.aosmd.com
symbol min typ max units bv dss 30 v 1 t j =55c 5 i gss 100 na v gs(th) 1.5 2.1 2.6 v i d(on) 64 a 18.4 25 t j =125c 26.2 36 24.5 35 m w g fs 22 s v sd 0.75 1 v i s 2.5 a c iss 373 448 pf c oss 67 pf c rss 41 pf r g 1.8 2.8 w q g (10v) 7.1 11 nc q g (4.5v) 3.3 nc q gs 1.4 nc q gd 1.7 nc t d(on) 4.5 6.5 ns t r 2.4 ns t d(off) 14.8 ns t f 2.5 ns t rr 10.5 12.6 ns q rr 4.5 nc rev4 may.2012 this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery time body diode reverse recovery charge i f =5.8a, di/dt=100a/ m s drain-source breakdown voltage on state drain current i d =250 m a, v gs =0v v gs =4.5v, v ds =5v v gs =10v, i d =5.8a reverse transfer capacitance i f =5.8a, di/dt=100a/ m s gate threshold voltage v ds =v gs i d =250 m a v ds =0v, v gs = 20v gate-body leakage current total gate charge gate source charge v gs =4.5v, i d =4.8a i s =1a,v gs =0v vds=5v, id=5.8a electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss m a v ds =30v, v gs =0v zero gate voltage drain current turn-off delaytime v gs =10v, v ds =15v, r l =2.6 w , r gen =3 w turn-off fall time r ds(on) static drain-source on-resistance forward transconductance diode forward voltage maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters vgs=10v, vds=15v, id=5.8a total gate charge gate drain charge m w v gs =0v, v ds =15v, f=1mhz switching parameters gate resistance v gs =0v, v ds =0v, f=1mhz turn-on rise time a: the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environmen t with t a =25 c. the value in any given application depends on the user's specific boa rd design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction t emperature. c. the r q ja is the sum of the thermal impedence from junction to le ad r q jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtaine d using <300 m s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environmen t with t a =25 c. the soa curve provides a single pulse rating. f.the current rating is based on the t 10s thermal resistance rating. alpha & omega semiconductor, ltd. www.aosmd.com
typical electrical and thermal characteristics 373 448 67 41 1.2 1.8 10.5 12.6 4.5 functions and reliability without notice. 10 17 24 31 38 45 0 5 10 15 20 r ds(on) (m w ww w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage 0.6 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature v gs =10v id=5.8a v gs =4.5v id=4.8a 10 20 30 40 50 60 2 4 6 8 10 r ds(on) (m w ww w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage 25 c 125 c v ds =5v v gs =4.5v v gs =10v i d =5.8a 25 c 125 c 0 10 20 30 40 50 60 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics v gs =3.5v 4.5v 6v 10v 0 3 6 9 12 15 1.5 2 2.5 3 3.5 4 4.5 i d (a) v gs (volts) figure 2: transfer characteristics 25 c 125 c v ds =5v 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 i s (a) v sd (volts) figure 6: body-diode characteristics 25 c 125 c alpha & omega semiconductor, ltd. www.aosmd.com
typical electrical and thermal characteristics 0 2 4 6 8 10 0 2 4 6 8 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 100 200 300 400 500 600 0 5 10 15 20 25 30 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss 0 10 20 30 0.001 0.01 0.1 1 10 100 1000 power (w) pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q qq q ja normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal impe dance c oss c rss v ds =15v i d =5.8a single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =125 c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150 c t a =25 c 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) figure 9: maximum forward biased safe operating area (note e) 10 m s 10ms 1ms 0.1s dc r ds(on) limited t j(max) =150 c t a =25 c 100 m s 10s alpha & omega semiconductor, ltd. www.aosmd.com
|
